IGBT (insulated gate bipolar transistor) is the core device of power control and power conversion, is composed of BJT (bipolar transistor) and MOS (insulated gate field effect tube) composite full-control voltage-driven power semiconductor devices, with high input impedance, low on-state voltage drop, high-speed switching characteristics and low conduction state loss and so on, in the higher frequency of large and medium power applications occupy the The main position in the higher frequency large and medium power applications.
New energy vehicles driven by 800V, the main inverter represented by the SiC penetration of the full speed, contributing to the largest downstream market and drive the charging pile, optical storage and UPS market growth. Silicon carbide devices to the current voltage level of 600-1700V, power level 10kW-1MW silicon-based IGBT as the main replacement object. The following five types of application segments to become the current and future core potential areas.
800V architecture brings direct performance improvement, superimposed on the supply side, the application side, the cost side of the multiple benefits, to promote new energy vehicles to become the core application of SiC position in the next five years.
SiC/IGBT power semiconductor device main test parameters
In recent years, IGBT has become a power electronics field of particular attention in the power electronic devices, and has been more and more widely used, then the test of IGBT has become particularly important. lGBT test includes static parameter test, dynamic parameter test, power cycle, HTRB reliability test, etc., the most basic of these tests is the static parameter test.
As semiconductor processes continue to improve, test and verification become more important. Usually, the main power semiconductor device characteristics are divided into static characteristics, dynamic characteristics, switching characteristics. Static parameter characteristics are mainly characterized by the device intrinsic characteristics indicators, and the operating conditions are not related to the relevant parameters, such as many power devices, static DC parameters (such as breakdown voltage V (BR) DSS, leakage current I CES / IDSS / IGES / IGSS, threshold voltage VGS (th), transconductance Gfs, voltage drop VF, conduction resistance RDS (on)) and so on. Power semiconductor device is a composite full-control voltage-driven devices, both high input impedance and low on-state voltage drop advantages; at the same time, the semiconductor power device chip is a power electronic chip, need to work in the high-current, high-voltage, high-frequency environment, the chip's high reliability requirements, which has brought some difficulties to the test. Traditional measurement techniques or instrumentation on the market can generally cover the testing needs of device characteristics, but the technology of wide bandwidth semiconductor devices SiC (Silicon Carbide) or GaN (Gallium Nitride) has greatly expanded the distribution of high-voltage, high-speed range. Accurate characterization of I-V curves or other static characteristics of power devices at high current/high voltage poses a more demanding challenge for device test tools.
Prosser IGBT power semiconductor device static parameter test solution
PMST series power device static parameter test system is a high-precision voltage/current test and analysis system positively designed and leanly built by Wuhan Purcells, which is a comprehensive test system capable of providing IV, CV, transconductance and other rich functions with the advantages of high-precision, wide measurement range, modularized design, and easy upgrading and expansion. It is designed to fully satisfy the static parameter characterization and testing of wafers, chips, devices and modules from basic power diodes, MOSFETs, BJTs, IGBTs to wide bandwidth semiconductors such as SiC and GaN, etc., with excellent measurement efficiency, consistency and reliability. It turns any engineer into an industry expert.
In order to meet the needs of users in different test scenarios, Purcell has launched three new power device static parameter test systems: PMST Power Device Static Parameter Test System, PMST-MP Power Device Static Parameter Production Line Semi-Automated Test System, and PMST-AP Power Device Static Parameter Production Line Fully-Automated Test System.
Full coverage from lab to small and large volume production lines
Full coverage from Si IGBTs, SiC MOS to GaN HEMTs
Full coverage from wafer, chip, device, module to IPM
Product Features
1、High voltage, high current
High voltage measurement/output capability up to 3500V (scalable up to 10kV)
High current measurement/output capability up to 6000A (multiple modules in parallel)
2、High precision measurement
nA class leakage current, μΩ class on-resistance
0.1% accuracy measurement
Four-wire testing
3、Modularized configuration
Flexible configuration of various measurement units according to actual testing needs
The system is designed to be upgradable, so that measurement units can be added or upgraded at a later stage.
4、High testing efficiency
Built-in dedicated switching matrix, automatic switching of circuits and measurement units according to test items
Supports one-click testing of all national standard indicators
5、Software feature-rich
Upper computer comes with device standard parameter test project template, can be directly accessed and used
Supports curve plotting
Automatic saving of test data and support for EXCEL format export
Open standard SCPI command set for integration with third-party systems
6、Good scalability
Support room temperature and low and high temperature testing
Flexibility to customize various fixtures
Can be used in conjunction with third-party equipment such as probe stations, temperature chambers, etc.
Hardware Features and Performance Benefits
1、Fast response to high current output, no overshooting
Adopting self-developed high-performance pulsed high-current source and high-voltage source, the output build-up process is fast and overshoot-free. During the test, the typical rise time of high current is 15μs, and the pulse width is adjustable from 50 to 500μs. The pulsed high-current test method can effectively reduce the error caused by the device's own heat generation.
2、High-voltage test supports constant voltage and current limiting, constant current and voltage limiting mode
The self-developed high-performance high-voltage source provides fast build-up and break-down response without overshoot. In the breakdown voltage test, current limit or voltage limit can be set to prevent device damage due to overvoltage or overcurrent.
Specification
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