麦科信(Micsig)光隔离探头MOIP系列带宽范围从100MHz到1GHz,可测±0.01V至±6250V差模信号。基于独家 SigOFIT™ 引领技术,MOIP系列拥有极高的共模抑制比,1GHz频段依然高达108dB,隔离电压高达85kV,底噪小于0.45mVrms,在其带宽范围内洞见信号的全部真相,是判定其他电压探头所测信号真实性的终极裁判。
MOIP系列采用先进的激光供电技术,激光传输信号,激光传输电能(不用电池,电源更纯净),可365天不间断测试,标准BNC接口,适配所有品牌示波器;秒速自校准,无需等待,上电即测,无需预热,极高稳定性,温漂极小,精度优于1%,可在0dB与20dB切换,使得单根衰减器也拥有2个量程来提高信噪比;输入电容最小仅1pF,测氮化镓(GaN)不炸管,衰减器和光纤长度皆可定制,可用于测量SiC/GaN等功率器件的栅极电压驱动等高压高频挑战性场景。

The truest signal presentation
SigOFIT光隔离探头具有极高的共模抑制比,在100MHz时CMRR高达128dB、在1GHz时CMRR仍然高达108dB,是判定其他电压探头所测信号真实性的终极裁判。

Extremely high test accuracy and stability
作为判定其他电压探头所测信号真实性的终极裁判,测试精度是SigOFIT光隔离探头的重要指标。SigOFIT光隔离探头,具有极佳的幅频特性,直流增益精度优于1%,底噪小于0.45mVrms,预热5min后零点漂移小于0.1%,增益漂移小于1%。

Optimal Test Means for Third Generation Semiconductors
Third-generation semiconductor devices due to the short on and off time, the signal has a faster rising edge and falling edge, the signal has a high energy of high-frequency harmonics, SigOFIT optical isolation probe in the highest bandwidth, but still has a common mode rejection ratio of more than 100dB, can be nearly perfect suppression of high-frequency common-mode noise generated by the oscillation of the signal presented by the signal without additional redundant components, it is the third-generation semiconductor It is the perfect choice for third-generation semiconductor testing.

Testing Gallium Nitride (GaN) without Blowing Tubes
SigOFIT光隔离探头测试引线短且采用同轴传输,探头输入电容最小仅1pF,测试氮化镓(GaN)十分安全。

Flexible, efficient and easy to use
SigOFIT光隔离探头比传统高压差分探头体积更小,探头引线更精巧,使用更加灵活方便;探头响应快,上电即测,校准时间小于1秒,校准时,无需断开测试连接,可实时保证精确的信号输出。

真正光隔离技术
用激光传输信号+用激光传输电能(不用电池,电源更纯净),可365天不间断测试。

Wider test range
不同于高压差分探头只可以测试高压信号,SigOFIT光隔离探头通过匹配不同的衰减器,可以测试±0.01V至±6250V的差模信号,并实现满量程输出,达到很高的信噪比。

application scenario
The SigOFIT Optical Isolation Probe can be used as the final arbiter when there is a question as to the accuracy and veracity of the results measured by other voltage probes.
Power Supply Device Evaluation, Current Parallel Measurement, EMI and ESD Troubleshooting
Motor drive design, power converter design, electronic ballast design
Design and analysis of Gallium Nitride, Silicon Carbide, and IGBT half/full bridge devices
Secure Isolation Testing for High Voltage High Bandwidth Test Applications
Testing of inverters, UPS and switching power supplies
Wide voltage, wide bandwidth test applications
Various Floating Ground Tests

| model number | MOIP100P | MOIP200P | MOIP350P | MOIP500P | MOIP800P | MOIP1000P |
|---|---|---|---|---|---|---|
| bandwidths | 100MHz | 200MHz | 350MHz | 500MHz | 800MHz | 1GHz |
| rising time | ≤3.5ns | ≤1.75ns | ≤1ns | ≤700ps | ≤500ps | ≤450ps |
| Common mode rejection ratio | DC: 180dB 100MHz: 128dB |
DC: 180dB 200MHz: 122dB |
DC: 180dB 350MHz: 118dB |
DC: 180dB 500MHz: 114dB |
DC: 180dB 800MHz: 110dB |
DC: 180dB 1GHz: 108dB |
| Test Voltage Range | 标配OP20(MMCX), ±25V 选配OP50(MMCX), ±62.5V 选配OP200(MCX), ±250V 选配OP1000(MCX), ±1250V 选配OP2000(MCX), ±2500V 选配OP5000(LCX), ±6250V |
标配OP20(MMCX), ±25V 选配OP50(MMCX), ±62.5V 选配OP200(MCX), ±250V 标配OP1000(MCX), ±1250V 选配OP2000(MCX), ±2500V 选配OP5000(LCX), ±6250V |
选配OP20(MMCX), ±10V 标配OP50(MMCX), ±25V 选配OP100(MMCX), ±50V(仅适配MOIP500P) 标配OP2000(MCX), ±1000V 选配OP5000(MCX), ±2500V 选配OP10000(LCX), ±5000V |
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| bottom noise | <0.45mVrms | |||||
| DC Gain Accuracy | 1% | |||||
| common-mode voltage (electronics) | 85kVpk | |||||
| Oscilloscope Side Interface | Universal standard BNC connector, can be used with all brands of oscilloscopes | |||||
Comprehensive test and measurement service provider-Shenzhen Weike Electronic Technology Co.








