Multi-scenario solutions

SiC/IGBT and its application development

 IGBT (insulated gate bipolar transistor) is the core device of power control and power conversion, is composed of BJT (bipolar transistor) and MOS (insulated gate field effect tube) composite full-control voltage-driven power semiconductor devices, with high input impedance, low on-state voltage drop, high-speed switching characteristics and low conduction state loss and so on, in the higher frequency of large and medium power applications occupy the The main position in the higher frequency large and medium power applications.

Materials Research - Specializing in Semiconductor Electrical Performance Testing

Solar cells, also called photovoltaic cells, have three main parts in the power generation process: first, the semiconductor material absorbs light energy to produce unbalanced electron-hole pairs or dipoles; second, the unbalanced electrons and holes move from the generation to the potential field, which can be either diffusion or drift; third, the unbalanced electrons and holes move in the opposite direction under the action of the potential field and separate. After the solar cell is fabricated it is tested and characterized to reflect the performance of the resulting cell.

       Solar cells have different testing needs in each step of the process from R&D to production, and their photovoltaic characteristics, including voltammetric I-V characterization, are crucial for deriving important parameters about solar cell performance, including maximum current IMAX and voltage VMAX, open-circuit voltage VOC, short-circuit current ISC, fill factor FF, and conversion efficiency η, among others.