Comprehensive test and measurement service provider-Shenzhen Weike Electronic Technology Co.
- Product Description
- Technical Parameters
- Performance Characteristics
- appliance
- Optional accessories
- Product Brochure
System components.
Xinrui Zhongke power device static parameter test system, mainly including test host, test line, test fixture, computer, host computer software, as well as related test accessories and other components. The whole system adopts
The test equipment developed in-house by New Roc-Master has built-in voltage, current and capacitance measurement modules of various specifications. Combined with the proprietary host computer test software, the test unit can be configured with different settings according to the needs of the test project.
The test data can be saved and exported, and I-V and C-V curves can be created. Test data can be saved and exported, and I-V and C-V curves can be created. In addition, the Tester can be used in conjunction with a Probe Station.
For wafer-level chip testing, the FTD is a new technology that can be used to test the chips at the wafer level.
System Parameters: |
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| model number | Main specifications | realm | accuracy | |||||||||
| Collector-Emitter | input voltage | 300V--3500V | ±0.1% | |||||||||
| amps | 5A--6000A | ±0.1% | ||||||||||
| Minimum voltage pulse width | 1ms | ±100uS | ||||||||||
| Current pulse width | 50μs~500μs | ±5μs | ||||||||||
| Leakage current test range | 1nA~100mA | |||||||||||
| Gate-Emitter | input voltage | 300mV--300V | ±0.1% | |||||||||
| amps | 10nA - 1A (DC) / 10A (pulse) | ±0.1% | ||||||||||
| pulse width | 200us - 100ms | ±10uS | ||||||||||
| Capacitance Testing | *Frequency range | 10Hz~1MHz | ±0.01% | |||||||||
| Capacitance value range | 0.01pF~9.9999F | ±0.05% | ||||||||||
| signal level | 10mV-2Vrms | 0.06 | ||||||||||
| bias voltage | 300V--3500V | ±0.1% | ||||||||||
| Temperature control | realm | 25℃~200℃ | ±1°C | |||||||||
Main Applications of SP26S Series
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Software Features:
- The voltage and current measurement units inside the mainframe are of multi-range design with an accuracy of 0.11 TP3T.
- Gate-emitter, supports up to 30V/10A pulsed current output and testing down to pA leakage currents
- Collector-emitter supporting up to 6000A of high speed pulse current with a typical rise time of 15μs and high speed synchronized voltage sampling
- Supports up to 8000V output with automatic leakage current measurement.
- Capacitance characterization including input capacitance, output capacitance, and reverse transfer capacitance with up to 1 MHz support
| > Type of device and item to be tested | ||||||||||||||
| Parameter classification | parameter symbol | Parameter description | Parameter classification | parameter symbol | Parameter description | |||||||||
| triode (vacuum tube or transistor) | V(BR) CEO | Collector-emitter breakdown voltage
push down |
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| MOSFET | V(BR)DSS | Gate-Source Breakdown Voltage | V(BR)CBO | Collector-base breakdown voltage | ||||||||||
| VGS(th) | Gate Threshold Voltage | V(BR)EBO | Emitter-base breakdown voltage | |||||||||||
| IDSS | source leakage current (of electricity) | ICBO | Collector-base cutoff current | |||||||||||
| IGSS | Gate Leakage Current | IEBO | Emitter-base cutoff current | |||||||||||
| RDS(on) | Source-drain on-resistance | VCESAT | Collector-emitter saturation
push down |
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| VSD | Body Diode On Voltage | |||||||||||||
| VBESAT | Base-emitter saturation voltage | |||||||||||||
| ISD | Body diode conduction current | |||||||||||||
| IC | Collector Current | |||||||||||||
| Ciss | Input Capacitance | |||||||||||||
| IB | Base current | |||||||||||||
| Coss | Output Capacitance | Ccb | Collector-base capacitance | |||||||||||
| Crss | Reverse Transmission Capacitance | Ceb | Emitter-base capacitance | |||||||||||
| gfs | crossover conduction | |||||||||||||
| hFE | gain (electronics) | |||||||||||||
| Output Characteristic Curve
Transfer characteristic curve C-V characteristic curve |
Input Characteristic Curve
Output Characteristic Curve C-V characteristic curve |
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| IGBT | VCES | Collector-emitter voltage | GaN HEMT | V(BR)DSS | Gate-Source Breakdown Voltage | |||||||||
| V(BR)CES | Collector-emitter breakdown voltage | VGS(th) | Gate Threshold Voltage | |||||||||||
| IDSS | source leakage current (of electricity) | |||||||||||||
| VCEsat | Collector-emitter saturation voltage | IGSS | Gate Leakage Current | |||||||||||
| RDS(on) | Source-drain on-resistance | |||||||||||||
| IC | Collector Current | |||||||||||||
| VSD | Body Diode On Voltage | |||||||||||||
| ICES | Collector cutoff current | |||||||||||||
| ISD | Body diode conduction current | |||||||||||||
| VGES | Gate-Emitter Voltage | Ciss | Input Capacitance | |||||||||||
| VGE (th) | Gate-emitter threshold voltage | Coss | Output Capacitance | |||||||||||
| IGES | Gate Leakage Current | Crss | Reverse Transmission Capacitance | |||||||||||
| Ciss | Input Capacitance | gfs | crossover conduction | |||||||||||
| Coss | Output Capacitance | Output Characteristic Curve
Transfer characteristic curve C-V characteristic curve |
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| Crss | Reverse Transmission Capacitance | |||||||||||||
| gfs | crossover conduction | |||||||||||||
| optocoupler | IF | forward current (electricity) | ||||||||||||
| Output Characteristic Curve
Transfer characteristic curve C-V characteristic curve |
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| VF | forward voltage | |||||||||||||
| V (BR) CEO | Reverse breakdown voltage | |||||||||||||
| thyristor | VR | Reverse breakdown voltage | VCE (sat) | Output saturation voltage drop | ||||||||||
| ICEO | Reverse cutoff current | |||||||||||||
| IR | inverse leakage current | |||||||||||||
| Input Capacitance
Output Capacitance Inlet and outlet isolation capacitors CIO |
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| VF | forward voltage | |||||||||||||
| IF | forward current (electricity) | |||||||||||||
| Cd | capacitance value | Output current transfer ratio CTR
Input Characteristic Curve Output Characteristic Curve |
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| I-V characteristic curve
C-V characteristic curve |
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| Note: More types of devices are supported in the process of refinement. | ||||||||||||||
> SP26S Series Ordering Information |
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| model number | Main specifications |
| SP26S2100H | 0.1% accuracy, 2200V,1000A |
| SP26S3200H | 0.1% accuracy, 3500V,2000A |
| SP26S3400H | 0.1% accuracy, 3500V,4000A |
| SP26S8600H | 0.1% Accuracy, 8000V,6000A |
SP26S Series Semiconductor Static Parameter Measurement System Configuration
- Test host, test cable, test fixture, computer
- TO-247-3L/TO-220 package fixtures are standard;
- Parametric test system software and system usage manual;
SP26S Series Semiconductor Static Parameter Measurement System Hardware Fixture Options
- SP-XXX, Customized Fixture Boards
